Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition

Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition

UNLABELLED Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to ...

Surface Chemical States of Heteroepitaxial Nitride Films on Sapphire by Metalorganic Chemical Vapor Deposition

Surface chemical states of GaN, AlGaN and InGaN by metalorganic chemical vapor deposition, and the influence of different dopants are studied with X-ray Photoelectron Spectroscopy (XPS). The results show that for most of the samples the N 1s peak can be fitted with a dominant GaN peak and a small N–H peak, while Ga 3d can be deconvoluted into three peaks from elemental Ga, GaN and Ga2O3. Si-dop...

Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition

The use of compliant silicon-on-insulator ~SOI! substrates instead of Si substrates is shown to improve the quality of epitaxial GaN layers by releasing the strain and absorbing the generated threading dislocations in the thin Si overlay of the SOI substrate. GaN layers have been grown on SOI substrates by low-pressure metalorganic chemical vapor deposition and various growth conditions and com...

Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition.

Epitaxial growth of vertical GaAs nanowires on Si(111) substrates is demonstrated by metal-organic chemical vapor deposition via a vapor-liquid-solid growth mechanism. Systematic experiments indicate that substrate pretreatment, pregrowth alloying temperature, and growth temperature are all crucial to vertical epitaxial growth. Nanowire growth rate and morphology can be well controlled by the g...